Semiconductor device
文献类型：专利
| 作者 | MAMINE TAKAYOSHI; ODA TATSUJI; IMAI TOSHIHIRO |
| 发表日期 | 1985-11-14 |
| 专利号 | JP1985229386A |
| 著作权人 | SONY KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser diode having stable characteristics by forming a non-current region to a semiconductor by implanting at least one kind of ions of He, Be, Li and B. CONSTITUTION:An N type first clad layer 2, a P type or N type active layer 3, a P type clad layer 4 and a P type low resistivity cap layer 5 are shaped on an N type base body 1 through epitaxial growth in succession. A mask 7 is formed on the cap layer 5, and boron B is implanted in depth intruding to the thickness of one part of the second clad layer 4 from the upper section of the cap layer 5 to shape a non-current injecting region 21 having high resistance. The mask is removed, and electrodes 7, 8 are applied, thus obtaining a semiconductor laser diode having stable characteristics. He, Be, Li, etc. can be used besides B as implanting ions. |
| 公开日期 | 1985-11-14 |
| 申请日期 | 1984-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87532]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY KK |
| 推荐引用方式 GB/T 7714 | MAMINE TAKAYOSHI,ODA TATSUJI,IMAI TOSHIHIRO. Semiconductor device. JP1985229386A. 1985-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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