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文献类型：专利
| 作者 | MORIMOTO TAIJI; HAYASHI HIROSHI; YAMAMOTO SABURO; YANO MORICHIKA |
| 发表日期 | 1993-09-14 |
| 专利号 | JP1993064478B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To contrive the improvement in manufacturing yield of the titled element of hetero junction type and in reliability of characteristics by a method wherein a groove is formed in a substrate on which multilayer crystals are laminated. CONSTITUTION:After the grown surface of a crystal layer 8 is flattened by filling the groove 7 formed in the crystal growing substrate 1 with the crystal layer 8 doped with a small amount of Mg (0.2 at % or less), a clad layer 9 doped with a large amount of Mg (0.3 at % or more) is grown. Thereby, a clad layer 9 suitably controlled in carrier concentration and layer thickness is deposited on the substrate 1, and a flat active layer 4 is laminated thereon, resulting in the formation of a multilayer crystal structure for laser oscillation. Since the groove is filled with a crystal layer, the growing speed does not decrease, and the coefficient of As diffusion in the growing solution is kept constant; accordingly, the groove is filled rapidly. As a result, the growing surface of the crystal layer is almost flattened in a relatively short time. Next, a perfect hetero junction which prevents the leakage of carriers from the active layer can be obtained by depositing a flat active layer on the clad layer 9 having a sufficient carrier concentration. |
| 公开日期 | 1993-09-14 |
| 申请日期 | 1984-04-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87537]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | MORIMOTO TAIJI,HAYASHI HIROSHI,YAMAMOTO SABURO,et al. -. JP1993064478B2. 1993-09-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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