Semiconductor laser element
文献类型：专利
| 作者 | KAYANE NAOKI; TAKAHASHI TAKEO; KAJIMURA TAKASHI; YAMASHITA SHIGEO; AIKI KUNIO |
| 发表日期 | 1983-11-22 |
| 专利号 | JP1983200588A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having low threshold value of small noise by a method wherein the distance between the top end of a high impurity region and an active layer is set to 5mum or less. CONSTITUTION:A groove 8 is formed on an N type GaAs substrate 1 in a stripe form, an N type Ga1-xAlxAs clad layer 2, a Ga1-yAlyAs active layer 3, a P type Ga1-xAlxAs clad layer 4, and an N type GaAs cap layer 5 are grown thereon, then Zn is partically diffused into a stripe form at the same position as the groove 8 of the substrate, and thus a diffused region 9 of width -5mum is formed. Thereafter, a Cr-Au electrode 6 is evaporated on the N type GaAs layer 5, and an AuGeNi-Au electrode 7 on the N type GaAs substrate 1; the element is isolated by cleavage at the interval of 300mum in the direction rectangular to the stripe and by stripe at the interval of 400mum in the direction parallel to the stripe. By the control of the position of the diffusion front, the distance (d) between the diffusion front and the active layer is set to 5mum or less, preferably 0.8mum or less in order to obtain a good noise characteristic and a low threshold value. |
| 公开日期 | 1983-11-22 |
| 申请日期 | 1982-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87541]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KAYANE NAOKI,TAKAHASHI TAKEO,KAJIMURA TAKASHI,et al. Semiconductor laser element. JP1983200588A. 1983-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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