Semiconductor laser device
文献类型：专利
| 作者 | SASAKI YOSHIMITSU; KAJIMURA TAKASHI; KAYANE NAOKI; NAKAMURA MICHIHARU |
| 发表日期 | 1984-08-21 |
| 专利号 | JP1984145588A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the electric and optical characteristics of a semiconductor laser device, and to lengthen life on a high-output operation by coating the light-emitting output end surfaces of the semiconductor laser device so that one side reflects beams to a high degree and the other side reflects them to a low degree. CONSTITUTION:An end surface on one side is coated with first dielectric film SiO2 (a refractive index n1:45) in film thickness of lambda/4n1, 140nm, by the discharge of Ar gas by using SiO2 as a target (lambda is the oscillation wavelength of a laser). An end surface on the other side is coated with second dielectric film SiO2 (a refractive index n2=45) in film thickness of lambda/4n2, 140nm, through the same method. The target is changed over to Si, Ar gas is discharged under the state in which H2 gas is mixed into Ar gas by approximately 50% at the ratio of partial pressure, and the second dielectric film SiO2 is coated with third dielectric film amorphous Si (a refractive index n3:3.3) in film thickness of lambda/4n3, 60nm. Likewise, the third dielectric film amorphous film Si is coated with fourth dielectric film SiO2 in 140nm and fifth dielectric film amorphous Si in 60nm. The reflectivity of a low reflection film (a first dielectric film) is brought to approximately 7% and that of high reflection films (second - fifth dielectric films) to approximately 90% through said processes, and differential efficiency and a kink level are improved. |
| 公开日期 | 1984-08-21 |
| 申请日期 | 1983-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87542]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SASAKI YOSHIMITSU,KAJIMURA TAKASHI,KAYANE NAOKI,et al. Semiconductor laser device. JP1984145588A. 1984-08-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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