Buried semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | NISHIDA TOSHIO; SUGIURA HIDEO; TAMAMURA TOSHIAKI |
| 发表日期 | 1992-10-20 |
| 专利号 | JP1992296078A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To provide a semiconductor laser by a method wherein a semiconductor laminate is formed so as to fill a groove provided with a plane pattern in stripes. CONSTITUTION:A semiconductor layer 2 is formed on a semiconductor substrate Then, a semiconductor substrate body 9 provided with the semiconductor substrate 1 and a semiconductor layer 8 is formed. In succession, a groove 12 provided with a stripe-like plane pattern is provided to the semiconductor substrate body 9, and a semiconductor region 6 is formed. A semiconductor clad layer 21, a semiconductor guide layer 22, a semiconductor active layer 23, a semiconductor guide layer 24, and a semiconductor clad layer 25 are successively laminated on the semiconductor substrate body 9 to constitute a semiconductor laminate 20, where the semiconductor laminate 20 is formed so as to nearly fill the groove 12. In succession, a mask layer 10 is removed from the semiconductor substrate body 9, and then a protective film 30 is provided. Then, electrode layers 34 and 35 are formed on the protective film 30. |
| 公开日期 | 1992-10-20 |
| 申请日期 | 1991-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87549]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | NISHIDA TOSHIO,SUGIURA HIDEO,TAMAMURA TOSHIAKI. Buried semiconductor laser and manufacture thereof. JP1992296078A. 1992-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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