Buried type semiconductor laser
文献类型：专利
| 作者 | TAKIGUCHI, TOHRU; WATATANI, CHIKARA |
| 发表日期 | 2008-02-28 |
| 专利号 | US20080049805A1 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser |
| 英文摘要 | A semiconductor laser includes a p-type InP substrate and a ridge section of a p type InP first cladding layer, an AlGaInAs strained quantum well active layer and a n type InP second cladding layer, laminated one atop the other. On both sides of the ridge section, a current blocking layer including a p-type InP first burying layer, an n-type InP second burying layer, and a semi-insulating Fe-doped InP third burying layer are laminated, one atop the other. A top face of the third burying layer is covered with an n-type InP semiconductor layer. This structure suppresses leakage current on the top face of the third burying layer and improves reliability of the semiconductor laser. |
| 公开日期 | 2008-02-28 |
| 申请日期 | 2006-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87551]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | TAKIGUCHI, TOHRU,WATATANI, CHIKARA. Buried type semiconductor laser. US20080049805A1. 2008-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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