External cavity type semiconductor laser device
文献类型：专利
| 作者 | HAYASHI HIROSHI; MAEI SHIGEKI; YAMAMOTO OSAMU; KASAI SHUSUKE; MIYAUCHI NOBUYUKI |
| 发表日期 | 1988-09-26 |
| 专利号 | JP1988229890A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | External cavity type semiconductor laser device |
| 英文摘要 | PURPOSE:To suppress an oscillation mode hop effectively in thermally wide range and therefore to render a semiconductor laser stable in operational property by a method wherein linear expansion coefficient of a mount component is so set as to be smaller than that of copper but larger than those of a semiconductor laser element and a reflecting component. CONSTITUTION:A projecting side face 1a is provided at one side face of a semiconductor laser element 1 of an external cavity type semiconductor laser device, and a reflection surface 2a high in reflectivity coated with dielectric is provided with a reflecting component 2 facing the side face 1a. The element 1 and the component 2 are mounted on the mount component 3 of metal of which main component is iron. The linear expansion coefficient of the component 3 is smaller than that of copper but larger than those of the element 1 and the component 2. The mode hop of a oscillation mode is effectively suppressed in thermally wide range and consequently a semiconductor laser is kept stable in operational property. |
| 公开日期 | 1988-09-26 |
| 申请日期 | 1987-03-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87553]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | HAYASHI HIROSHI,MAEI SHIGEKI,YAMAMOTO OSAMU,et al. External cavity type semiconductor laser device. JP1988229890A. 1988-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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