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文献类型：专利
| 作者 | YAMASHITA SHIGEO; AIKI KUNIO |
| 发表日期 | 1988-12-26 |
| 专利号 | JP1988067350B2 |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To enable to obtain the laser oscillation at basic mode with good reproducibility by providing a crystal grown reformed layer between a clad layer and an absorption layer on an active layer. CONSTITUTION:The clad layer 2, active layer 3, clad layer 4, liquid phase grown reformed layer 5, photo absorption layer 6, a transparent filament layer 7, and a contact layer 8 are successively formed on a semiconductor substrate By such a construction, a great amount of strain and defect based on the mis matching generated between the layers 6 and 4 hardly generate because of alleviation in two steps by the layer 5 between the layers 6 and 5 and between the layers 5 and 4. Besides, the interposition of the layer 5 enables to easily form a double hetero type laser element having a transparent filament structure in the upper part of the active layer even with a (GaAl) As series crystal. |
| 公开日期 | 1988-12-26 |
| 申请日期 | 1984-01-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87558]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,AIKI KUNIO. -. JP1988067350B2. 1988-12-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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