Semiconductor laser
文献类型：专利
| 作者 | TSUNEKAWA YOSHIFUMI |
| 发表日期 | 1990-05-24 |
| 专利号 | JP1990135789A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enhance an optical output by forming refractive index waveguide structures near both the end faces of a resonator, and disposing a plurality in different numbers at both the end faces at an interval for generating an optical coupling to each other. CONSTITUTION:A double hetero junction structure made of an N-type GaAs buffer layer 102, an N-type AlGaAs first clad layer 103, an AlGaAs active layer 104, a P-type AlGaAs second clad layer 105 and a P-type GaAs contact layer 106 on an N-type GaAs substrate 101 is etched to the midway of the layer 105 in a clad layer shape to bury the side face of a riblike optical guide. The vicinity of the center of the rib is formed to be wide at the end face of a resonator, the interval of the ribs is set narrowly in the degree of generating optical mutual action between the adjacent ribs, and further the numbers of riblike optical guides each having a refractive index wave guide mechanism are differentiated at both ends of the resonator. Thus, a high optical output oscillation can be performed. |
| 公开日期 | 1990-05-24 |
| 申请日期 | 1988-11-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87565]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | TSUNEKAWA YOSHIFUMI. Semiconductor laser. JP1990135789A. 1990-05-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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