Manufacture of semiconductor laser device
文献类型：专利
| 作者 | MORI YOSHIHIRO; OUYA JIYUN; SHIBATA ATSUSHI |
| 发表日期 | 1987-02-27 |
| 专利号 | JP1987045087A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To contrive the extension of an external resonator length by forming an inductor waveguide which is in contact directly with an active layer of a semiconductor laser which is attached to a semiconductor substrate on the same semicnoductor substrate, and forming its end planes of mirror surfaces. CONSTITUTION:An inductor waveguide which is in contact directly with an active layer 8 of a semiconductor laser 1 attached to a semiconductor substrate is formed on the same semiconductor substrate. The thickness of the semiconductor laser 1 is about 50-100mum and it is bonded to an Si sub-mount 2 by a gold wire 6 with the epitaxial side down to compose a laser part 4. A core 4 of an inductor external resonator 3 is connected directly with the active layer 8 of the semiconductor laser 1 and it propagates the laser beam. As the length of that becomes longer, the spectrum width becomes narrow. The reflectance to the end plane which is farther from the semiconductor laser 1 of the external resonator is increased, and in addition for improving the characteristics, the end plane of the inductor external resonator 3 is mirror- polished and gold 11 is evaporated to about 1,000Angstrom thickness. |
| 公开日期 | 1987-02-27 |
| 申请日期 | 1985-08-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87574]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MORI YOSHIHIRO,OUYA JIYUN,SHIBATA ATSUSHI. Manufacture of semiconductor laser device. JP1987045087A. 1987-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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