Liquid phase epitaxial growth
文献类型：专利
| 作者 | SHIMA KATSUTO |
| 发表日期 | 1982-12-06 |
| 专利号 | JP1982198621A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growth |
| 英文摘要 | PURPOSE:To obtain a liquid-phase spitaxial layer with plan surface by a method wherein the distance of convex parts is set at a predetermined dimension determined depending upon diffusion coefficient D of speed controlling factor and an epitaxial growth time tau thereof and the surfacial width of the convex part is set under 50mum. CONSTITUTION:The convex part having the distance L, the width of 3-50mum and the depth of 1-3mum is formed by providing an etching for GaAs substrate 1 When the time required to charge GaAlAs 13 in the region surrounded with the convex part 12 is indicated at tau and the diffusion coefficient of speed controlling factor of GaAlAs is indicated at D, the distance L of the convex part is set far less than (DXr). Since the growth along the horizontal direction preceeds very fast if any convex part is on the substrate in the epitaxial process, the growth for GaAlAs can be achieved at the cooling speed much faster than the conventional and the growth stops when a desired film thickness can be obtained on the surface of the convex part 12. According to such a constitution, the cooling speed is increased more without reducing a control property for the epitaxial growth layer on the surface of the convex part and the surface of the convex part can be formed very thin and the epitaxial layer with plan surface also be formed at a good reproducibility. The light shielding effect can be established preferably because of less dragging in the shoulder. |
| 公开日期 | 1982-12-06 |
| 申请日期 | 1981-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87575]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO. Liquid phase epitaxial growth. JP1982198621A. 1982-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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