Compound semiconductor electrode structure
文献类型：专利
| 作者 | TANIOKA AKIRA; SUHARA MOTOI; KONNO KUNIAKI |
| 发表日期 | 1988-10-19 |
| 专利号 | JP1988252471A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Compound semiconductor electrode structure |
| 英文摘要 | PURPOSE:To prevent the peeling of a multilayered metallic layer formed onto one kind of Au, Ag or Al by coating a compound semiconductor crystal with a dielectric insulating layer, shaping a Ti or Cr layer and laminating one kind of Au, Ag or Al. CONSTITUTION:An uppermost-layer P-InGaAsP cap layer 1 in a four-dimensional cap layer is coated with an silicon oxide as a dielectric insulator layer 2, and a Ti layer 3 and an Au layer 4 for protecting the Ti layer 3 are applied. An opening 5 is formed through patterning by a PEP process, and an AuZn layer 6, a Ti layer 7, a Pt layer 8 and an Au layer 9 are evaporated through an electron beam method in succession. Accordingly, an ohmic electrode structure having excellent adhesion is acquired in a compound semiconductor crystal element. |
| 公开日期 | 1988-10-19 |
| 申请日期 | 1987-04-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87576]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | TANIOKA AKIRA,SUHARA MOTOI,KONNO KUNIAKI. Compound semiconductor electrode structure. JP1988252471A. 1988-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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