Manufacture of multifunctional multibeam semiconductor laser
文献类型：专利
| 作者 | YONEDA KOJI; TOMINAGA KOJI |
| 发表日期 | 1990-01-31 |
| 专利号 | JP1990028988A |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of multifunctional multibeam semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture a plurality of semiconductor laser elements having different oscillation modes onto the same substrate through a simple manufacturing process by using an LPE method as all growth methods and positioning the ridge end of a first clad layer in a mesa groove stripe formed at a position separate only by proper length from the center of a ridge. CONSTITUTION:An N-GaAs layer is grown on a P-type GaAs substrate 1 by using an LPE method and a current block layer 2 is shaped, and a ridge stripe 21 in 5mum width and 0.7mum height is formed to the layer 2 in the forward mesa direction of . Mesa groove stripes 22, 22 in 3.0mum width and 7mum depth are shaped at the center of the ridge stripe 21 and at a place separate only by 100mum from the center. The ridge end of a layer 3 can be positioned onto a stripe 22 separate only by 100mum from the center of a ridge by setting the degree of supersaturation at 2.75 deg.C from a time when (a) the ridge height of the graph of the degree of supersaturation ( deg.C) and a distance (mum) from the center of the ridge to the ridge end of the layer 3 is represented by 0.7mum at a time when the growth time of the layer 3 is represented by ninety sec by employing the LPE method. Accordingly, yield on manufacture can be improved. |
| 公开日期 | 1990-01-31 |
| 申请日期 | 1988-07-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87577]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | YONEDA KOJI,TOMINAGA KOJI. Manufacture of multifunctional multibeam semiconductor laser. JP1990028988A. 1990-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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