Semiconductor laser
文献类型：专利
| 作者 | TANEYA, MOTOTAKA; TAKATANI, KUNIHIRO; OHMI, SUSUMU |
| 发表日期 | 2006-12-20 |
| 专利号 | EP1120872B1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | An InGaAlN-based semiconductor laser device, comprising a first layer of a first conductivity type, an active layer having a smaller forbidden band than that of the first layer, and a second layer of a second conductivity type having a larger forbidden band than that of the active layer. The second layer includes a flat region and a stripe-shaped projecting structure. A stripe-shaped optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripe-shaped projecting structure. A current-constricting layer of the first conductivity type or of a high resistance is formed for covering a top surface of the flat region of the second layer, a side surface of the projecting structure of the second layer, and a side surface of the optical waveguide forming layer. A difference between a thermal expansion coefficient of the current-constricting layer and a thermal expansion coefficient of the second layer is in the range of -4 × 10-9/°C to +4 x 10-9/°C. |
| 公开日期 | 2006-12-20 |
| 申请日期 | 1999-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87580]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TANEYA, MOTOTAKA,TAKATANI, KUNIHIRO,OHMI, SUSUMU. Semiconductor laser. EP1120872B1. 2006-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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