Semiconductor laser device
文献类型：专利
| 作者 | YAGI KATSUMI |
| 发表日期 | 1990-06-22 |
| 专利号 | JP1990162785A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a TJS type semiconductor laser device which is excellent in productivity and in which a far-field pattern of laser rays is bilaterally symmetrical by a method wherein a groove is provided onto the laminated surfaces of regions of different conductivity types formed sandwiching a pn junction between them respectively along the pn junction face. CONSTITUTION:A buffer layer 2, a first clad layer 3, and an active layer 4, a second clad layer 5, a third clad layer 6, and a cap layer 7 are successively laminated on the primary face of a substrate An Si3N4 film is formed on the cap layer 7, which is photo-etched to form a diffusion mask 14. Moreover, a diffusion concentration control film 15 is laminated on the diffusion mask and the exposed cap layer 7. And then, Zn is diffused to invertedly form a p-type region 9. After the diffusion concentration control film 15 and the diffusion mask 14 have been removed, the cap layer 7 is selectively etched to remove a part of it as wide as 8mum centering a pn junction 10. Grooves 8 and 8 are formed on the surface of a region of each conductivity type separate from each other by a space of 2mum or so centering the pn junction 10 through etching. |
| 公开日期 | 1990-06-22 |
| 申请日期 | 1988-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87582]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YAGI KATSUMI. Semiconductor laser device. JP1990162785A. 1990-06-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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