Manufacture of semiconductor laser device
文献类型：专利
| 作者 | MOGI NAOTO; WATANABE YUKIO; SHIMADA NAOHIRO |
| 发表日期 | 1989-03-23 |
| 专利号 | JP1989077190A |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the reactive current flowing through an active layer on both sides of a stripe-shape groove section, by forming a conversion layer of P-type in a clad layer of N-type. CONSTITUTION:A photoresist 21 is coated on a current blocking layer 15 and a stripe-shaped opening is then formed in the photoresist 2 Subsequently, the current blocking layer 15 is selectively etched using the resist 21 as a mask to form a stripe shaped groove section 22. Next, after the resist 21 is removed, prior to the second crystal growth, heat treatment is performed at high temperature in the As pressurized atmosphere. Therefore, impurities of P-type contained in a clad layer 14 of P-type are diffused into a clad layer 12 of N-type. As a result, the part of the clad layer 12 of N-type which is in contact with an active layer 1, except the part thereof under the stripe-shaped groove section 22, is converted the conductivity type thereof from N-type to P-type so that a ccnversion layer 19 of P-type is formed by self-aligning. Accordingly, the reactive current flowing through the outside of the stripe-shaped luminous region can be sufficiently reduced, and the semiconductor laser device with a low threshold value can be produced. |
| 公开日期 | 1989-03-23 |
| 申请日期 | 1988-08-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87584]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | MOGI NAOTO,WATANABE YUKIO,SHIMADA NAOHIRO. Manufacture of semiconductor laser device. JP1989077190A. 1989-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。