Semiconductor laser device
文献类型：专利
| 作者 | UMEDA, JUN-ICHI; KAJIMURA, TAKASHI |
| 发表日期 | 1983-01-18 |
| 专利号 | US4369513 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | Disclosed is a semiconductor laser element having on a predetermined semiconductor substrate a stacked region for optical confinement including an active layer and clad layers, a first electrode disposed on the semiconductor substrate side and a second electrode disposed over the stacked region, and means for constructing an optical resonator, the semiconductor laser element comprising the fact that the means to inject current into the active layer is formed of a plurality of stripe conductive regions which are juxtaposed in traveling direction of a laser beam, and that laser radiations emitted in correspondence with the respective stripe conductive regions form a simply connected net and give rise to nonlinear interactions among them. As a typical example of the current injection means, the conductive regions have a strip-shaped pattern which includes a broader portion and a narrower portion. A coupled-multiple-stripe laser element in which the phases and wavelengths of the laser radiations of the respective strips are uniform is realized. |
| 公开日期 | 1983-01-18 |
| 申请日期 | 1980-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87589]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | UMEDA, JUN-ICHI,KAJIMURA, TAKASHI. Semiconductor laser device. US4369513. 1983-01-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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