Semiconductor laser device, manufacturing method thereof, and optical disk reproducing and recording unit
文献类型:专利
作者 | KAWANISHI, HIDENORI; YAMAMOTO, KEI; HIRUKAWA, SHUICHI |
发表日期 | 2004-07-01 |
专利号 | US20040125843A1 |
著作权人 | SHARP KABUSHIKI KAISHA |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device, manufacturing method thereof, and optical disk reproducing and recording unit |
英文摘要 | A semiconductor laser device has at least a first conductivity-type lower clad layers, a quantum well active layer, and a second conductivity-type upper clad layer, which are stacked on a first conductivity-type GaAs substrate. The quantum well active layer is composed of a barrier layer and a well layer which are alternately stacked and both made of an InGaAsP-based material. The quantum well active layer is grown while being doped with a second conductivity type of impurity so as for the semiconductor laser device to exhibits high reliability even at the time of high-power driving as well as long life. |
公开日期 | 2004-07-01 |
申请日期 | 2003-10-29 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/87591] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | KAWANISHI, HIDENORI,YAMAMOTO, KEI,HIRUKAWA, SHUICHI. Semiconductor laser device, manufacturing method thereof, and optical disk reproducing and recording unit. US20040125843A1. 2004-07-01. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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