中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device, manufacturing method thereof, and optical disk reproducing and recording unit

文献类型:专利

作者KAWANISHI, HIDENORI; YAMAMOTO, KEI; HIRUKAWA, SHUICHI
发表日期2004-07-01
专利号US20040125843A1
著作权人SHARP KABUSHIKI KAISHA
国家美国
文献子类发明申请
其他题名Semiconductor laser device, manufacturing method thereof, and optical disk reproducing and recording unit
英文摘要A semiconductor laser device has at least a first conductivity-type lower clad layers, a quantum well active layer, and a second conductivity-type upper clad layer, which are stacked on a first conductivity-type GaAs substrate. The quantum well active layer is composed of a barrier layer and a well layer which are alternately stacked and both made of an InGaAsP-based material. The quantum well active layer is grown while being doped with a second conductivity type of impurity so as for the semiconductor laser device to exhibits high reliability even at the time of high-power driving as well as long life.
公开日期2004-07-01
申请日期2003-10-29
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/87591]  
专题半导体激光器专利数据库
作者单位SHARP KABUSHIKI KAISHA
推荐引用方式
GB/T 7714
KAWANISHI, HIDENORI,YAMAMOTO, KEI,HIRUKAWA, SHUICHI. Semiconductor laser device, manufacturing method thereof, and optical disk reproducing and recording unit. US20040125843A1. 2004-07-01.

入库方式: OAI收割

来源:西安光学精密机械研究所

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