Organic metal vapor phase crystal growth
文献类型：专利
| 作者 | ONO KENICHI; MIZUOCHI HITOSHI |
| 发表日期 | 1992-11-25 |
| 专利号 | JP1992338635A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Organic metal vapor phase crystal growth |
| 英文摘要 | PURPOSE:To increase the growth speed and to maintain the sharpness of an interface by making the total pressure of a reaction tube low when a part of a crystal nearby the interface is formed and by making it high when the other parts are formed. CONSTITUTION:By a pressure-variable MOCVD device, a p-type buffer layer 2 is formed on a p-type InP substrate 1 under high reaction tube pressure. When the p-type buffer layer 2 is formed to the proper thickness, the supply of group III element gas is stopped and the pressure is reset to low. When the pressure of a reaction tube comes to the set one, the supply of group III element gas is started again and a p-type InP buffer layer 3, an InGaAsP active layer 4, and an n-type InP clad layer 5 are formed in sequence. By this method, the time required for crystal growth is shortened for the part which was formed under high pressure while the composition sharpness is obtained for the part which was formed under low pressure. |
| 公开日期 | 1992-11-25 |
| 申请日期 | 1991-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87602]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ONO KENICHI,MIZUOCHI HITOSHI. Organic metal vapor phase crystal growth. JP1992338635A. 1992-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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