Semiconductor laser
文献类型：专利
| 作者 | KATSUYAMA TSUKURU |
| 发表日期 | 1992-08-06 |
| 专利号 | JP1992215488A |
| 著作权人 | SUMITOMO ELECTRIC IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To provide a visible light semiconductor laser which is not increased in a threshold value current, facilitated for its reproducibility, and has less problem in a manufacturing process in a semiconductor laser using a GaAs substrate. CONSTITUTION:A semiconductor layer is formed of a GaInP active layer 5 containing no Al in an optical waveguide layer 20 and AlAsInP light confinement layers 4, 6 disposed at upper and lower sides of the layer 5 to hold it. Its lattice constant is set smaller than that of GaAs thereby to apply a tensile stress to the layer 5. |
| 公开日期 | 1992-08-06 |
| 申请日期 | 1990-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87609]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC IND LTD |
| 推荐引用方式 GB/T 7714 | KATSUYAMA TSUKURU. Semiconductor laser. JP1992215488A. 1992-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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