Semiconductor laser
文献类型：专利
| 作者 | OOSHIMA MASAAKI; TAKENAKA NAOKI; HIRAYAMA NORIYUKI; KINO YUKIHIRO |
| 发表日期 | 1985-08-22 |
| 专利号 | JP1985160682A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To stabilize a longitudinal mode by structure having no corrugation by forming a groove in the direction of a (100) InP substrate, shaping a growth layer, forming a groove in the direction and burying double hetero-structure of InP/InGaAsP/InP into the groove. CONSTITUTION:A U-shaped groove is formed in the direction on a (100) substrate 1 in a striped manner, and a p-InP layer 2, an n-InP layer 3 and an n-InGaAsP (Eg-0.95eV) layer 4 are shaped on the groove in succession. A V groove is further formed in the direction in the striped manner, and an n-InP clad layer 6, an n-InGaAsP active layer 7, a p-InP clad layer 8 and p-InGaAsp cap layer 9 are further shaped on a wafer with such orthogonal grooves. One part of the n-InGaAsP active layer 4 is disconnected by the InP layers 2, 3 in a semiconductor laser having such an oscillating wavelength of 3mum, and gains are distributed selectively in a laser resonator by the reflection and interference effects of oscillating beams, thus easily stabilizing a longitudinal mode. |
| 公开日期 | 1985-08-22 |
| 申请日期 | 1984-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87610]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | OOSHIMA MASAAKI,TAKENAKA NAOKI,HIRAYAMA NORIYUKI,et al. Semiconductor laser. JP1985160682A. 1985-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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