Semiconductor light emitting device
文献类型：专利
| 作者 | AZUMI JUNICHI; INABA FUMIO; ITO HIROMASA |
| 发表日期 | 1990-01-16 |
| 专利号 | JP1990010787A |
| 著作权人 | INABA FUMIO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain high emitting output by surrounding the first conductivity type semiconductor layer with the current checking layer consisting of at least one layer and the second conductivity type semiconductor layer, and forming an active region along the first conductivity type semiconductor layer. CONSTITUTION:An epitaxial layer 134 is laminated on a substrate 101, and a columnar projection is formed almost vertically. A current checking layer 130 is so formed as to bury the projection on the layer 134. An epitaxial layer 102 is formed almost vertically to the substrate 101 inside the recess. An ohmic electrode 107 is formed on the layer 130 and the layer 102, and an orhmic electrode 1 06 is formed at the rear of the substrate 10 By letting currents flow to both electrodes of p side electrode 106 and the n side electrode 107, carriers are implanted to the active region formed almost vertically to the substrate 101, and the light emission by recoupling of the carriers is generated. The emitted light can be taken out as light output from an opening 150 which is formed on the electrode 107 side, i.e., at the upper face of the projection of the layer 134. |
| 公开日期 | 1990-01-16 |
| 申请日期 | 1988-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87615]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INABA FUMIO |
| 推荐引用方式 GB/T 7714 | AZUMI JUNICHI,INABA FUMIO,ITO HIROMASA. Semiconductor light emitting device. JP1990010787A. 1990-01-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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