Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | YAMAMOTO MOTOYUKI; TSUBURAI YASUHIKO |
| 发表日期 | 1988-07-09 |
| 专利号 | JP1988166284A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To prevent damages to end faces as much as possible and to stabilize the transverse mode control at a low threshold value, by using an active layer having a multiple quantum well structure while destroying the quantum well structure by diffusion at the opposite ends of a current constricting stripe. CONSTITUTION:On a substrate 10, there are deposited an n-type clad layer 11, an active layer 12, p-type clad layers 13, 14 and an n-type current blocking layer 15 sequentially in that order. Then resist 31 is formed on the current blocking layer 15 such that it is opened in a linear stripe. The current blocking layer 15 is etched away by 0.8 mum for example and then the resist 31 is removed. Resist 31 having a stripe opening is newly formed and etching is performed. Subsequently, regrowth layers of optical waveguide layer 16, a coat layer 17 and a contact layer 18 for example are formed on the surface of the current blocking layer 15 and the stripe opening. The residual clad layer 14 is used for diffusing Zn, whereby the diffused Zn reaches the clad layer 11 in the regions other than the light-emitting stripe and the quantum well structure of the active layer 12 in these regions are destroyed. |
| 公开日期 | 1988-07-09 |
| 申请日期 | 1986-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87624]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | YAMAMOTO MOTOYUKI,TSUBURAI YASUHIKO. Semiconductor laser device and manufacture thereof. JP1988166284A. 1988-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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