Formation of groove having stepped structure
文献类型：专利
| 作者 | YOSHITOSHI KEIICHI |
| 发表日期 | 1986-08-25 |
| 专利号 | JP1986191086A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of groove having stepped structure |
| 英文摘要 | PURPOSE:To decrease the number of processes, by sequentially laminating a first GaAs layer, a GaAlAs layer and a second GaAs layer on a semiconductor substrate, forming a groove from the surface to the substrate, and contacting the melt for growing GaAlAs with the surface of the laminated layers. CONSTITUTION:On a P-type GaAs substrate 1, a first N-type GaAs layer 2, an N-type Ga1-xAlxAs layer 3 and a second N-type GaAs layer 4 re sequentially laminated. The layers can be formed by growing methods such as a liquid-phase epitaxial growing method, a molecular beam epitaxial growing method and an MOCVD method. Then a groove 5 reaching the substrate 1 from the surface of the second GaAs layer 4 is formed. Thereafter, Ga1-yAlyAs forming melt, whose supersaturation degree is 5 deg.C, is contacted with the growing surface at a temperature of 780 deg.C. The melt is cooled at a speed of 0.5 deg.C/min. Then the layer 3 and the second layer 4 are selectively melted back, and a Ga1-yAlyAs layer 6 is grown on the contact surface. |
| 公开日期 | 1986-08-25 |
| 申请日期 | 1985-02-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87625]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YOSHITOSHI KEIICHI. Formation of groove having stepped structure. JP1986191086A. 1986-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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