Junction type semiconductor light emitting element
文献类型：专利
| 作者 | INABA FUMIO; ITO HIROMASA; SATO SHIRO; ITO HIROTAKA |
| 发表日期 | 1987-06-20 |
| 专利号 | JP1987137879A |
| 著作权人 | INABA FUMIO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Junction type semiconductor light emitting element |
| 英文摘要 | PURPOSE:To use the specified light in the vertical direction absorbing said light effectively by a method wherein a P-N junction only actually extending in vertical direction to a flat plate part is formed. CONSTITUTION:A heterowafer comprising an N-type AlxGa1-xAs layer A epitaxially grown to form a columnar protrusion P and an upper layer B1 is produced on an N-type GaAs substrate B3 and then said N-type AlGaAs layer A is ion-etched to form the columnar protrusion P. Next, with a masking layer 1 left as it is, another masking layer 2 is formed using the known masking agent of masking layer 1 on the surface of said columnar protrusion P and the upper layer B At this time, if the side periphery of columnar protrusion P is not in a state of no-masking, said periphery is formed into the state of no-masking by soft-etching process and then zinc is diffused in the impurity-fit P-type regions to form a P type region R1 and P-type region R2 so that a cylindrical P-N junction PN1 only may be formed on the interface between a no-impurity region and the P-type region R2. |
| 公开日期 | 1987-06-20 |
| 申请日期 | 1985-12-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87627]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INABA FUMIO |
| 推荐引用方式 GB/T 7714 | INABA FUMIO,ITO HIROMASA,SATO SHIRO,et al. Junction type semiconductor light emitting element. JP1987137879A. 1987-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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