中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device

文献类型:专利

作者KONDO, TAKASHI; TAKEDA, KAZUTAKA; NAKAYAMA, HIDEO
发表日期2013-07-25
专利号US20130188993A1
著作权人FUJI XEROX CO., LTD.
国家美国
文献子类发明申请
其他题名Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device
英文摘要A surface-emitting semiconductor laser includes a substrate, a first n-type semiconductor multi-layer reflecting mirror formed on the substrate including a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, an n-type semiconductor layer formed on the first semiconductor multi-layer reflecting mirror, having an optical film thickness greater than an oscillation wavelength, and including Al and Ga, an active region formed on the semiconductor layer, and a second p-type semiconductor multi-layer reflecting mirror formed on the active region and including a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, wherein an n-type impurity dopant injected into the semiconductor layer is a group VI material or Sn.
公开日期2013-07-25
申请日期2012-07-18
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/87628]  
专题半导体激光器专利数据库
作者单位FUJI XEROX CO., LTD.
推荐引用方式
GB/T 7714
KONDO, TAKASHI,TAKEDA, KAZUTAKA,NAKAYAMA, HIDEO. Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device. US20130188993A1. 2013-07-25.

入库方式: OAI收割

来源:西安光学精密机械研究所

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