Manufacture of compound semiconductor epitaxial wafer
文献类型：专利
| 作者 | NAKANISHI TAKATOSHI; MUTOU YUUHEI; OKAJIMA MASASUE |
| 发表日期 | 1985-04-16 |
| 专利号 | JP1985066420A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of compound semiconductor epitaxial wafer |
| 英文摘要 | PURPOSE:To prevent a conversion into a P type of the inside of an N clad layer by interposing a layer, which has the same mixed-crystal ratio as a P type clad layer and contains Zn in concentration lower than the P type clad layer or does not contain Zn, between an active layer and the P type clad layer, to which Zn is doped, and growing the layer in a vapor phase. CONSTITUTION:A layer, which has the same mixed-crystal ratio as a P type clad layer and contains Zn in concentration relatively lower than the P type clad layer or does not contain Zn, is interposed between an active layer and the P type clad layer and grown in an epitaxial manner in a vapor phase. A GaAs buffer layer 12 to which Se is doped is formed on a substrate such as an N type low resistance GaAs substrate 11, which has (100) orientation and contains Si in high concentration, and an N type Ga1-xAlxAs N clad layer 13 to which Se of a mixed crystal ratio (x) of 0.45 is doped, the un-doped Ga1-xAlxAs active layer 14 of (x) of 0.15, an un-doped Ga1-xAlxAs interposing layer 15 of (x) of 0.45, the P clad layer 16, to which Zn is doped in high concentration and (x) thereof is 0.45, and a GaAs P contact layer 17 similarly containing Zn in high concentration are grown on the layer 12 in succession. |
| 公开日期 | 1985-04-16 |
| 申请日期 | 1983-09-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87637]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | NAKANISHI TAKATOSHI,MUTOU YUUHEI,OKAJIMA MASASUE. Manufacture of compound semiconductor epitaxial wafer. JP1985066420A. 1985-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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