Semiconductor laser
文献类型：专利
| 作者 | SAKAKIBARA YASUSHI; HIRANO RIYOUICHI; HIGUCHI HIDEYO; OOMURA ETSUJI; NAMISAKI HIROBUMI; SUZAKI WATARU |
| 发表日期 | 1984-11-21 |
| 专利号 | JP1984205788A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the reliability and performance of a device by setting carrier concentration in a first conduction type current stopping layer and carrier concentration in first and second clad layers in predetermined relationship and displacing a P-N junction from the exposed interface between both clad layers. CONSTITUTION:Zinc, etc. easy to diffuse in a crystal are used as an impurity in a P-InP current stopping layer 2, and carrier concentration PB in the layer 2 is set to PB>NC to carrier concentration NC in an N-InP clad layer 5. A P-N junction can be displaced to the layer 5 side from the surface exposed at a high temperature through heat treatment after the growth of the crystal under the setting, and a section in the vicinity of an active layer 4 does not deteriorate. The relationship of carrier concentration PC in a P-InP clad layer 6 and concentration NC is set to PC |
| 公开日期 | 1984-11-21 |
| 申请日期 | 1983-05-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87641]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | SAKAKIBARA YASUSHI,HIRANO RIYOUICHI,HIGUCHI HIDEYO,et al. Semiconductor laser. JP1984205788A. 1984-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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