半導体レーザ装置
文献类型：专利
| 作者 | 広瀬 正則; ▲吉▼川 昭男; 粂 雅博; 山本 敦也; 中村 晃; 杉野 隆 |
| 发表日期 | 1996-03-21 |
| 专利号 | JP1996028547B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To enable integration of a laser device of this design with other electronic circuit elements by a method wherein a light reflecting means used for constituting a resonator is provided in parallel with a primary face of a substrate, and a region whose conductivity type is the same as that of a second clad layer is provided to the peripheral section of a buried layer so as to make its base reach to the second clad layer. CONSTITUTION:A light reflecting means 6 used for constituting a resonator is provided in parallel with a primary face of a substrate 1, so that an optical output can be extracted from the substrate primary face side. And, the substrate 1 is a semi-insulator, a region 8 is provided to a peripheral section of a buried layer in such a manner that the top of the region 8 is level with the primary face of the substrate 1 and the base is in contact with a second clad layer 3, where the region 8 is the same conductivity type as the second clad layer 3, and the other electrode can be built on the region 8, so that a laser device of this design can be integrated together with other electronic circuit elements. |
| 公开日期 | 1996-03-21 |
| 申请日期 | 1987-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87647]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 広瀬 正則,▲吉▼川 昭男,粂 雅博,等. 半導体レーザ装置. JP1996028547B2. 1996-03-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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