Semiconductor laser
文献类型：专利
| 作者 | FURUSE TAKAO |
| 发表日期 | 1987-11-21 |
| 专利号 | JP1987269373A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To inhibit variations of an effective refractive index that are caused by fluctuations in thickness of an active layer and improve linearity of electric/light output characteristics by making the refractive index of the 3rd semiconductor layer larger toward the refractive index of the 2nd semiconductor layer adjacent to the 1st semiconductor layer. CONSTITUTION:An N-type GaAs layer 2 is formed as the 1st semiconductor layer on a P-type GaAs substrate 1 to form a groove 2a in a shape such as a stripe. Further, P-type Al0.4Ga0.6As layer 3 as the 2nd semiconductor layer, P-type Al0.15Ga0.85As layer 4 as an active layer, N-type Al0.37Ga0.63As layer 5, N-type GaAs layer 6 as well as N-type ohmic electrode 7 as the 3rd semiconductor layers are formed in sequence. Also, P-type ohmic electrode 8 is formed at the rear of substrate 1 and then, it is arranged that a refractive index of the 3rd semiconductor layer 5 is larger than that of the 2nd semiconductor layer 3. As a result, the refractive indexes of respective layers in the B section directed by an arrow are shown by a solid line and a luminous intensity distribution of light waves guided by causing the active layer 4 to be an axis is shown by a distribution that is biased at the rear of 3rd semiconductor layer 5. Then, the light waves are hardly affected by an absorption loss of N-type GaAs layer 2. |
| 公开日期 | 1987-11-21 |
| 申请日期 | 1986-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87652]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | FURUSE TAKAO. Semiconductor laser. JP1987269373A. 1987-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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