Semiconductor laser light source device
文献类型：专利
| 作者 | MITOMI OSAMU; NOTOMI MASAYA; IWAMURA HIDETOSHI; YOSHIKUNI YUZO |
| 发表日期 | 1991-03-28 |
| 专利号 | JP1991073583A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser light source device |
| 英文摘要 | PURPOSE:To narrow the width of an oscillating spectrum and to stabilize a frequency by regulating an effective light length from a reflecting return light wavelength selecting and laser light emitting end face to a grating waveguide in the waveguide by utilizing electro-optical effect of a quantum well structure semiconductor in the waveguide. CONSTITUTION:A light emitted from laser light generating means 1 arrives at a grating waveguide 23 through a light waveguide 19 of a quantum well structure formed in a semiconductor substrate 20, only the light having a wavelength selected by a filtering function of the waveguide 23 is reflected, and emitted from laser light generating means 1 through an optical waveguide 22. Here, effective light length from the emitting end face of reflecting return light wavelength selecting and laser light emitting means 1 of the waveguide 2 to the waveguide 23 can be electrically controlled by applying suitable voltages VB, VP to an electrode 14, thereby obtaining extremely narrow stable spectrum. |
| 公开日期 | 1991-03-28 |
| 申请日期 | 1989-08-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87666]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | MITOMI OSAMU,NOTOMI MASAYA,IWAMURA HIDETOSHI,et al. Semiconductor laser light source device. JP1991073583A. 1991-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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