Semiconductor laser
文献类型：专利
| 作者 | OOSHIMA MASAAKI; HIRAYAMA NORIYUKI; TOYODA YUKIO; KINO YUKIHIRO |
| 发表日期 | 1985-08-20 |
| 专利号 | JP1985158686A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To stabilize longitudinal-mode oscillation by cutting one part of an N-InGaAsP active layer by an InP layer. CONSTITUTION:A U-groove is formed in the direction of a (100)N-InP substrate 1, and a P-InP layer 2, an N-InP layer 3 and an N-InGaAsP layer 4 are grown. The layer 4 is removed selectively through striped etching in the direction, and only the InP layer 3 is removed through etching. A first clad layer 6, an active layer 7, a second clad layer 8 and a cap layer 9 are shaped through second LPE growth. Accordingly, the active layer 7 has structure in which it is cut by the InP layer 3, and oscillating beams are reflected partially and transmitted partially by the N-InP layer 3. When the thickness of the InP layer 3 is kept within a range or 0.6mum-3.4mum, stable longitudinal-mode oscillation is obtained. |
| 公开日期 | 1985-08-20 |
| 申请日期 | 1984-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87673]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | OOSHIMA MASAAKI,HIRAYAMA NORIYUKI,TOYODA YUKIO,et al. Semiconductor laser. JP1985158686A. 1985-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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