Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | EGUCHI KAZUHIRO |
| 发表日期 | 1989-09-04 |
| 专利号 | JP1989220490A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To enhance the controllability of the composition of an active layer and to improve the controllability of the wavelength of oscillation, by forming a double heterojunction wherein the active layer comprises an Al1-y-zGazInyAs crystal and a clad layer comprises an Al1-xInxAs crystal. CONSTITUTION:Three layers of an n-type Al1-xInxAs clad layer which serves a role of an active layer 102, an Al1-y-zGazInyAs active layer and a p-type Al1-xInxAs clad layer 104 are laminated on an n-type InP substrate 101, and a double heterojunction is formed. This element can be manufactured only by the combinations of materials matching the lattice of InP in this constitution. The controllability of the composition of the active layer is made excellent. The controllability of the wavelength of the oscillation of laser light is enhanced. The control of the interface between the active layer and the clad layer can be made easy. |
| 公开日期 | 1989-09-04 |
| 申请日期 | 1988-02-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87683]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | EGUCHI KAZUHIRO. Semiconductor laser element and manufacture thereof. JP1989220490A. 1989-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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