Multiple quantum well semiconductor laser
文献类型：专利
| 作者 | NISHI KENICHI |
| 发表日期 | 1987-06-05 |
| 专利号 | JP1987123789A |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multiple quantum well semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the unbalance of carriers without increasing a gain width induced by couplings between respective quantum wells by employing barrier layers whose forbidden band widths are varied along the thickness direction as the barrier layers constituting an active layer of a multiple quantum well structure. CONSTITUTION:An N-type GaAs buffer layer 5, an N-type AlGaAs cladding layer 3, an active layer, a P-type AlGaAs cladding layer 4 and a P-type GaAs cap layer 6 are formed on the center part of an N-type GaAs substrate 9 and P-type AlGaAs blocking layers 7 and N-type AlGaAs blocking layers 8 are formed on the left and right parts of the substrate 9 and P-type side and N-type side electrodes 11 and 10 are formed on the upper surface and the lower surface respectively. The active layer is constituted by nondoped GaAs quantum well layers 1-1-1-8 with the thickness of 150Angstrom and nondoped AlxGa1-xAs barrier layers 2-1-2-8 with the thickness of 50Angstrom which are laminated alternately. |
| 公开日期 | 1987-06-05 |
| 申请日期 | 1985-11-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87687]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | NISHI KENICHI. Multiple quantum well semiconductor laser. JP1987123789A. 1987-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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