Semiconductor laser device
文献类型：专利
| 作者 | IKETANI, AKIRA |
| 发表日期 | 2002-02-28 |
| 专利号 | US20020024982A1 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | The semiconductor laser device includes the semiconductor substrate made of GaAs, the lower clad layer above the substrate, the well layer made of InGaAs above the lower clad layer, and the upper clad layer above the well layer. Furthermore, the diffusion preventing layer is formed on at least one surface of the substrate, lower clad layer, well layer, and upper clad layer. This diffusion preventing layer is characterized in that it has a forbidden band wider than that of the well layer. Finally, the optical damage suppressing layer is formed above the diffusion preventing layer. This optical damage suppressing layer also has a forbidden band wider than that of the well layer. |
| 公开日期 | 2002-02-28 |
| 申请日期 | 2001-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87690]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | IKETANI, AKIRA. Semiconductor laser device. US20020024982A1. 2002-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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