Semiconductor laser
文献类型：专利
| 作者 | YANO MITSUHIRO |
| 发表日期 | 1988-03-16 |
| 专利号 | JP1988060588A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To spread a range, in which the wavelength of outgoing laser beams can be controlled, by forming a second laser element optically coupling with a DFB laser element by side sections mutually near the DFB laser element. CONSTITUTION:Since a UFB laser element A is optically coupled with a second laser element B by side sections mutually, the refractive index of an optical guide for the DFB laser element A is worked by the change of the refractive index of an optical waveguide for the second laser element B and varied. Since the variation of the refractive index of the optical waveguide for the laser element A corresponds to the constant keeping of the refractive index and the alteration of the period of a diffraction grating 9a in a conventional DFB laser element, the variation of the refractive index of the optical waveguide for the element A works so as to change the wavelength of outgoing laser beams, and the range of variation of the wavelength can be spread. Accordingly, a range in which outgoing laser beams can be controlled is expanded, and the laser can correspond to operation such as the increase of the capacity of optical communication. |
| 公开日期 | 1988-03-16 |
| 申请日期 | 1986-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87697]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YANO MITSUHIRO. Semiconductor laser. JP1988060588A. 1988-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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