Semiconductor laser device
文献类型：专利
| 作者 | KAJIMURA TAKASHI; NAKATSUKA SHINICHI; KAYANE NAOKI; NAKAMURA MICHIHARU; ONO YUUICHI; UOMI KAZUHISA; OOTOSHI SOU |
| 发表日期 | 1985-12-10 |
| 专利号 | JP1985249381A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the lateral-mode-controlled laser device of low threshold current value, high output, and high reliability which is manufactured by organic metal vapor phase growth, by a method wherein a photo-absorption.current-stricture layer is provided nearly above the active region by introducing a multi-quantum well structure into the active region. CONSTITUTION:An n type GaAs substrate 11 is provided with an n type Ga1-xAlxAs clad layer 12 the first semiconductor layer having a larger forbidden band width than the substrate 11 and the same conductivity type as the substrate. Next, a multi- quantum well layer produced by repetition of a Ga1-yAlyAs well layer 13 the second semiconductor layer having a smaller forbidden band width than the first semiconductor layer and a Ga1-zAlzAs barrier layer 14 the third semiconductor layer having a forbidden and width of the medium value of those of the first and second semiconductor layers. Thereafter, a p type Ga1-uAluAs clad layer 15 the fourth semiconductor layer having a larger forbidden band width than the third semiconductor layer and the reverse conductivity type to that of the substrate and the Ga1-vAlvAs photo-absorption.current-stricture layer 16 the fifth semiconductor layer having a smaller forbidden band width than the third semiconductor layer and the same conductivity type as the substrate as successively grown by organic metal vapor phase growth. The thickness of the fourth semiconductor layer 15 is set at 0.4mum or less. |
| 公开日期 | 1985-12-10 |
| 申请日期 | 1984-05-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87706]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KAJIMURA TAKASHI,NAKATSUKA SHINICHI,KAYANE NAOKI,et al. Semiconductor laser device. JP1985249381A. 1985-12-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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