Semiconductor laser
文献类型：专利
| 作者 | NAKATSUKA SHINICHI; YAMASHITA SHIGEO; UCHIDA KENJI; KAJIMURA TAKASHI; TAKAHASHI TAKEO; UEJIMA KENICHI; SAITO KAZUNORI |
| 发表日期 | 1992-10-30 |
| 专利号 | JP1992309278A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent a high-frequently current from leaking out through the junction capacitance of a current blocking section when high-frequency modula tion is performed on a semiconductor laser used for an optical disk device, etc., for preventing the generation of noise. CONSTITUTION:Crystals of an n-Al0.5Ga0.5As clad layer 2 (5mum), undoped Al0.14Ga0.86As active layer 3 (0.04mum), p-Al0.5Ga0.5As clad layer 4 (5mum), and p-GaAs contact layer 5 (0.3mum) are successively grown on an n-GaAs substrate Then the layers 4 and 5 are processed to a ridge-like shape and a clock layer composed of an n-GaAs layer 6 (0.8mum) and undoped GaAs layer 7 (0.3mum) is formed. Finally, the structure shown in Fig. 1 is formed by growing a p-GaAs buried layer 8 (2mum). The laser chip of this semiconductor laser is formed by providing Au electrodes 9 on the surface and rear of the semiconductor wafer thus manufactured. |
| 公开日期 | 1992-10-30 |
| 申请日期 | 1991-04-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87710]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | NAKATSUKA SHINICHI,YAMASHITA SHIGEO,UCHIDA KENJI,et al. Semiconductor laser. JP1992309278A. 1992-10-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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