Semiconductor laser
文献类型：专利
| 作者 | YUASA TSUNAO |
| 发表日期 | 1983-06-20 |
| 专利号 | JP1983103190A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To stabilize the lateral mode oscillation, in the semiconductor laser having a double heterostructure, by thining the thickness of a second guide layer at the flat part of the outside of a bent part, infiltrating light into an absorbing semiconductor layer, and restricting an oscilating region to the bent part. CONSTITUTION:On an N type InP substrate 9, a step 10 with a depth of about 0.3-0.5mum is provided; and an N type InP layer (first guide layer) 11, an undoped InGaAsP layer (active layer forbidden band width=9.9454 eV) 12, a P type InP layer (second guide layer) 13, and a P typ InGaAsP layer (forbidden band width is 0.82 eV) 14 having the smaller forbidden band width than the active layer are sequentially laminated and formed by an epitaxial growing method. An SiO2 film 15 is formed on the P type InGaAsP layer 14. A stripe shaped window having a width of 2-5mum is provided by an ordinary photolithography method. A current injecting region is formed. Then AuZn is evaporated on the P type side and Au-Ge is evaporated on the N type side in a vacuum. Then heat treatment is performed in an hydrogen atmosphere and the alloys are obtained. After ohmic electrodes are obtained, gold is evaporated in a vacuum, and electrodes 16 and 17 are formed. |
| 公开日期 | 1983-06-20 |
| 申请日期 | 1981-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87712]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | YUASA TSUNAO. Semiconductor laser. JP1983103190A. 1983-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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