Semiconductor laser element
文献类型：专利
| 作者 | UCHIDA HISATOSHI |
| 发表日期 | 1983-02-28 |
| 专利号 | JP1983033886A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent the end surface from deteriorating due to concentration of a current by interposing an active layer with a pair of clad layers of reverse conductive type to each other and forming a contact diffused layer intruded into the inside from both ends of the active layer on the surface of one clad layer. CONSTITUTION:A channel 2 is formed on the main surface of a substrate 1, a lower clad layer 3, an active layer 4, an upper clad layer 5 and a cap layer 6 are laminated, and an anode electrode 7 is formed. Then, a contact diffused layer 8 is formed over the surface layer of the layers 6, 5. In this case, both ends of the layer 8 are disposed inside the end surfaces of the layers 6, 5. Further, a cathode electrode 9 is formed on the lower surface of the substrate |
| 公开日期 | 1983-02-28 |
| 申请日期 | 1981-08-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87713]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | UCHIDA HISATOSHI. Semiconductor laser element. JP1983033886A. 1983-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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