Semiconductor laser
文献类型：专利
| 作者 | MATSUI YASUHIRO; HORIKAWA HIDEAKI; WADA HIROSHI |
| 发表日期 | 1991-07-19 |
| 专利号 | JP1991167886A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To realize a high-output and high-speed modulation operation by a method wherein a current-blocking layer is formed to be of a structure where a system of a pnp three-layer structure and a system of a semiinsulating layer of only one layer are combined. CONSTITUTION:A preliminary layer 52 to be used as a current-blocking layer which is composed of a first p-InP layer 60, an n-InP layer 56, a second p-InP layer 58, an Fe-doped InP layer 60 as a semiinsulating layer and a third p-InP layer is formed on a 100 plane of a p-InP substrate 50. Then, a stripe-shaped V-groove 64 is formed in the layer 52 in the 011 direction identical to the oscillation direction. Then, a double heterostructure which is provided with a p-InP lower-side clad layer 68, a GaInAsP active layer 70 and an n-InP upper-side clad layer 72 is formed on a structure body provided with the groove 64. Since a part of the layer 62 is a semiinsulating and high-resistant layer according to a semiconductor laser of this structure, a parasitic capacity generated between the layer 56 and the layer 58 can be reduced. As a result, a modulation characteristic of the laser can be enhanced. |
| 公开日期 | 1991-07-19 |
| 申请日期 | 1989-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87720]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MATSUI YASUHIRO,HORIKAWA HIDEAKI,WADA HIROSHI. Semiconductor laser. JP1991167886A. 1991-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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