Semiconductor laser device
文献类型：专利
| 作者 | NAITO, HIROKI; KUME, MASAHIRO |
| 发表日期 | 1997-07-08 |
| 专利号 | US5646953 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | On an n-type semiconductor substrate, a buffer layer and a cladding layer are formed. On the cladding layer, an active layer made of Ga1-XAlXAs is formed. On the active layer, an n-type first optical guiding layer made of Ga1-Y1AlY1As is formed, and on the first optical guiding layer, an n-type second optical guiding layer made of Ga1-Y2AlY2As is formed in stripe. On the first optical guiding layer and the second optical guiding layer, an n-type cladding layer made of Ga1-Y3AlY3As is formed. The interface resistance between the first optical guiding layer and the cladding layer is larger than both the interface resistance between the first optical guiding layer and the second optical guiding layer and the interface resistance between the second optical guiding layer and the cladding layer. Between X, Y1, Y2, and Y3 of each AlAs mole fraction of the active layer, first and second optical guiding layers, and cladding layer, the relationships of Y3>Y2 and Y1>X>/=0 are satisfied. |
| 公开日期 | 1997-07-08 |
| 申请日期 | 1995-04-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87726]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | NAITO, HIROKI,KUME, MASAHIRO. Semiconductor laser device. US5646953. 1997-07-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。