Manufacture of semiconductor laser device
文献类型：专利
| 作者 | SAGARA MINORU; TAMURA HIDEO; IIDA SEIJI; KURIHARA HARUKI |
| 发表日期 | 1983-09-08 |
| 专利号 | JP1983151085A |
| 著作权人 | TOKYO SHIBAURA DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a buried type hetero laser with good yield by a method wherein the surface of a crystal growing substrate from a liquid crystal blocking mask is projected in a filament form while performing liquid epitaxial growth. CONSTITUTION:An N-Al0.45Ga0.55As 17 and an N-GaAs 18 are laminated on the N-GaAs substrate 16, and a part of the layer 18 is removed by etching by the aq. soln of NH3+H2O2. The surface of the exposed layer 17 is an oxide film, which becomes the mask 19 for blocking liquid crystal growth, and the remaining stripe shaped N-GaAs layer becomes the substrate surface 20 for crystal growth. An N-Al0.3Ga0.7As clad 21, a non-doped GaAs active layer 22, a P-Al0.3Ga0.7As clad 23 and a P-GaAs ohmic electrode 24 are successively formed epitaxially on this substrate by a normal method. Next, the part except for the main stripe part is covered with an Si3N4 25, and metallic electrodes 26 and 27 are attached. By this constitution, crystals can be easily formed on the stripe shaped window, and accordingly the yield of the buried hetero laser is remarkably improved. |
| 公开日期 | 1983-09-08 |
| 申请日期 | 1982-03-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87728]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA DENKI KK |
| 推荐引用方式 GB/T 7714 | SAGARA MINORU,TAMURA HIDEO,IIDA SEIJI,et al. Manufacture of semiconductor laser device. JP1983151085A. 1983-09-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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