Semiconductor laser device
文献类型：专利
| 作者 | ODANI JIYUN; MATSUI YASUSHI; UNO TOMOAKI |
| 发表日期 | 1989-06-05 |
| 专利号 | JP1989143282A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To generate an ultrashort pulse train by stricture and a mode lock of a spectral line width by a method wherein a semiconductor laser element and a Y- branched light transmission waveguide path are united and voltage is impressed on two Y-branched light waveguide paths to give light path difference of 1/4 wavelength, while outgoing light from a semiconductor laser makes two round trips on the Y- branched light waveguide paths so as to return to the semiconductor laser. CONSTITUTION:Laser light united on a light waveguide path 3 is branched to the light waveguide paths 4 and 5. When voltage is impressed on the electrodes 6 and 7, the refractive indices of the light waveguide paths 4 and 5 changed and when voltage is adjusted so that a phase change of the light waveguide path 4 may become pi/4, the light waveguide path 5 undergoes the phase change of -pi/4 and a phase difference on the surfaces 8 and 9 becomes pi/2 for being reflected, while upon returning to the Y-branched point, it undergoes a further phase change so as to be united in the phase difference pi. The united waveguide light is not outputted to the light waveguide path 3 but again waveguided to the light waveguide paths 4 and 5 for being reflected on the end surfaces 8 and 9 and now being united at the phase difference 2pi to be waveguided through the light waveguide path 3 so as to return to the semiconductor laser element |
| 公开日期 | 1989-06-05 |
| 申请日期 | 1987-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87731]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ODANI JIYUN,MATSUI YASUSHI,UNO TOMOAKI. Semiconductor laser device. JP1989143282A. 1989-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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