Semiconductor light emitting element
文献类型：专利
| 作者 | YOSHIDA NAOTO |
| 发表日期 | 1992-10-29 |
| 专利号 | JP1992306886A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To restrain P-type impurities from diffusing from a P-type clad layer into an active layer by a method wherein over a crystal layer different from the clad layer in composition or component element is introduced into the P-type clad layer adjacent to the active layer. CONSTITUTION:A Zn diffusion preventing crystal layer 8 different from a P-type clad layer 4 in composition or component element is inserted into the P-type clad layer 4 distant from an active layer 3 by a length of 0.1mum or below. By this setup, the diffusion of Zn as P-type doping impurities into an active layer in growth processes is restrained by the diffusion preventing layer 8. P-type impurities are prevented from diffusing from the P-type clad layer 4 into the active layer 3. By this constitution, a semiconductor light emitting element excellent in characteristics can be obtained. |
| 公开日期 | 1992-10-29 |
| 申请日期 | 1991-04-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87732]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YOSHIDA NAOTO. Semiconductor light emitting element. JP1992306886A. 1992-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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