Optical semiconductor device and manufacture thereof
文献类型：专利
| 作者 | SUZAKI SHINZOU |
| 发表日期 | 1985-05-07 |
| 专利号 | JP1985079793A |
| 著作权人 | FUJIKURA DENSEN KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To lower threshold currents, and to wave-guide beams efficiently by forming a diffraction grating on a waveguide layer, shaping a protective film to one part of the grating and forming an active layer to a section except the protective film. CONSTITUTION:An external waveguide layer 12 is formed on a semiconductor crystalline substrate 1 A diffraction grating 13 is formed in the whole region of the upper surface of the layer 12 or only in a necessary region. A protective film 14 is shaped on the upper surface of the grating 13 as a region for the external waveguide. An active layer 15 and a clad layer 16 are formed. Accordingly, since there is no selective etching process for forming a mesa section corresponding to the active layer, a crystal defect is not generated on the basis of selective etching, and threshold current value is lowered. |
| 公开日期 | 1985-05-07 |
| 申请日期 | 1983-10-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87734]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA DENSEN KK |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZOU. Optical semiconductor device and manufacture thereof. JP1985079793A. 1985-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。