Manufacture of semiconductor laser device
文献类型：专利
| 作者 | HAMADA TAKESHI; SHIBUYA TAKAO; WADA MASARU; SHIMIZU YUICHI; ITO KUNIO; TERAMOTO IWAO |
| 发表日期 | 1986-02-28 |
| 专利号 | JP1986042187A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To enable the production of internal stripe lasers having the vertical groove side by the use of chemical etching by a method wherein a groove coming from top of a GaAlAs layer vertically down to the substrate is formed, and each layer containing the active layer is formed on the groove part. CONSTITUTION:An N type GaAs current stricture layer 2 is grown on the P type GaAs substrate (100)1 plane by liquid phase epitaxial growth. Next, a non- doped GaAlAs layer 10 is grown. Thereafter, the groove reaching the substrate 1 is formed in the surface through a phot mask 9 in parallel with the direction by chemical etching. After removal of the mask 9 and the layer 10, a clad layer 3, an active layer 4, a clad layer 5, and a cap layer 6 are successively grown, and an N-side ohmic electrode 7 and a P-side ohmic electrode 8 are formed by metal vapor deposition. |
| 公开日期 | 1986-02-28 |
| 申请日期 | 1984-08-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87735]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HAMADA TAKESHI,SHIBUYA TAKAO,WADA MASARU,et al. Manufacture of semiconductor laser device. JP1986042187A. 1986-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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