Semiconductor light emitting device
文献类型：专利
| 作者 | WAKAO KIYOHIDE; KAMITE KIYOTSUGU; ISHIKAWA HIROSHI; YAMAGOSHI SHIGENOBU; SUDO HISAO |
| 发表日期 | 1987-09-19 |
| 专利号 | JP1987213290A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To reduce parasitic capacitance, and to improve frequency characteristics, by forming a contact layer composed of stripe-type quarternary compound semiconductor on a clad layer grown to cover a stripe-type active layer, forming an insulative layer on the both sides of the contact layer, and forming an electrode which covers the contact layer and the insulative layer. CONSTITUTION:On the both sides of an active region, a p-n-p-n junction of InP is arranged, and a current is effectively conducted into the active layer. As for a p-InGaAsP layer 8 as a contact layer arranged on a p-InP layer 6 as a clad layer, only the upper part of an active layer is formed in a stripe-type. Thereby, the current flowing in a junction capacitance outside an active region through the p-InGaAsP layer 8 as a contact layer can be reduced, so that a parasitic capacitance can be reduced, and frequency characteristics of laser is improved. |
| 公开日期 | 1987-09-19 |
| 申请日期 | 1986-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87737]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | WAKAO KIYOHIDE,KAMITE KIYOTSUGU,ISHIKAWA HIROSHI,et al. Semiconductor light emitting device. JP1987213290A. 1987-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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