Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | YOSHIKUNI YUUZOU |
| 发表日期 | 1985-06-04 |
| 专利号 | JP1985100491A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To improve the yield of a semiconductor laser and to enable to apply an FM modulation by the variation in the length of a waveguide by controlling a current applied to a control electrode formed above a photowaveguide, thereby varying the refractive index of the photowaveguide. CONSTITUTION:DFB lasers 1-5 are formed, and a laser operation is performed by injecting a current from a main electrode 5. A photowaveguide is formed with a composition having a band gap larger than an active layer 2, and coupled with the laser at the cleaved surface 7 in low loss. Carrier is injected by a current from a control electrode 8 to the photowaveguide 6, and the refractive index is varied by the current through the variation in the carrier density. Accordingly, the optical length of the photowaveguide 6 is varied by the current of the electrode 8, and the phase of the reflected light is varied. Thus, precise adjustment of the phase of the reflected surface can be performed to reliably obtain a stable single longitudinal mode oscillation by the adjustment of the current and to improve the yield. Further, a frequency modulation due to the variation in the control current can be performed. |
| 公开日期 | 1985-06-04 |
| 申请日期 | 1983-11-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87739]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | YOSHIKUNI YUUZOU. Distributed feedback type semiconductor laser. JP1985100491A. 1985-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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