Plane light emitting type semiconductor laser
文献类型：专利
| 作者 | IGA KENICHI; FURUSAWA KOTARO; IBARAKI AKIRA; ISHIKAWA TORU |
| 发表日期 | 1991-01-29 |
| 专利号 | JP1991021090A |
| 著作权人 | 科学技術振興事業団 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Plane light emitting type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain laser light from the surface of wafer and improve heat discharge characteristics by fusing a heat sink with the surface of an exposed epitaxial layer where a substrate whose part is equivalent to an active layer is removed. CONSTITUTION:An epitaxial layer comprising a semiconductor multilayer film 4, and active layer 6 is stocked on a substrate 1, In a plane light emitting laser which uses the semiconductor multilayer film 4 as a refracting mirror, a heat sink 15 is fused with the surface of an epitaxial layer where a substrate is exposed in a part equivalent to the active layer 6 and exposed outside. This construction makes it possible to obtain sufficient heat discharge characteristics since the distance between the active layer 6 and the heat sink 15 is short, thereby enabling continuous oscillation at room temperature and moreover obtaining laser light from the surface of wafer. |
| 公开日期 | 1991-01-29 |
| 申请日期 | 1989-06-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87741]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 科学技術振興事業団 |
| 推荐引用方式 GB/T 7714 | IGA KENICHI,FURUSAWA KOTARO,IBARAKI AKIRA,et al. Plane light emitting type semiconductor laser. JP1991021090A. 1991-01-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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